Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates
Journal article
Asgary, S., Vaghri, E., Daemi, M., Esmaili, P., Ramezani, A. H., Memon, S. and Hoseinzadeh, S. (2021). Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates. Applied Physics A. 127 (752), pp. 1-7. https://doi.org/10.1007/s00339-021-04892-0
Authors | Asgary, S., Vaghri, E., Daemi, M., Esmaili, P., Ramezani, A. H., Memon, S. and Hoseinzadeh, S. |
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Abstract | In this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape. |
Keywords | Aluminum thin films; Grain size; Magnetron sputtering; RF power; FTIR |
Year | 2021 |
Journal | Applied Physics A |
Journal citation | 127 (752), pp. 1-7 |
Publisher | Springer |
Digital Object Identifier (DOI) | https://doi.org/10.1007/s00339-021-04892-0 |
Web address (URL) | https://link.springer.com/article/10.1007/s00339-021-04892-0 |
Publication dates | |
10 Sep 2021 | |
Publication process dates | |
Accepted | 29 Aug 2021 |
Deposited | 15 Sep 2021 |
Publisher's version | License File Access Level Open |
Accepted author manuscript | File description 21-Applied Physics A-Asgary etal Memon 2021_MagnetronSputteringTechnique Al thin films File Access Level Controlled |
https://openresearch.lsbu.ac.uk/item/8xx7x
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Publisher's version
21-Applied Physics A-Asgary etal Memon 2021_MagnetronSputteringTechnique Al thin films.pdf | ||
License: CC BY 4.0 | ||
File access level: Open |
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