Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors
Journal article
Wang, Y., Howley, J., Faria, E.N., Huang, C., Carter-Searjeant, S., Fairclough, S., Kirkland, A., Davis, J.J., Naz, F., Sajjad, T., Goicoechea, J.M. and Mark Green (2023). Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors. Nanoscale Horizons. 8, pp. 1411-1416. https://doi.org/10.1039/d3nh00162h
| Authors | Wang, Y., Howley, J., Faria, E.N., Huang, C., Carter-Searjeant, S., Fairclough, S., Kirkland, A., Davis, J.J., Naz, F., Sajjad, T., Goicoechea, J.M. and Mark Green |
|---|---|
| Abstract | We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, e.g. P(Si(CH3)3)3. |
| Year | 2023 |
| Journal | Nanoscale Horizons |
| Journal citation | 8, pp. 1411-1416 |
| Publisher | Royal Society of Chemistry (RSC) |
| ISSN | 2055-6764 |
| Digital Object Identifier (DOI) | https://doi.org/10.1039/d3nh00162h |
| Web address (URL) | https://doi.org/10.1039/D3NH00162H |
| Publication dates | |
| Online | 19 Jul 2023 |
| Publication process dates | |
| Deposited | 01 Aug 2023 |
| Accepted | 19 Jul 2023 |
| Publisher's version | License File Access Level Open |
| Accepted author manuscript |
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