Narrow-band anisotropic electronic structure of ReS2

Journal article


Biswas, D, Ganose, Alex M, Yano, R, Riley, JM, Bawden, L, Clark, OJ, Feng, J, Collins-Mcintyre, L, Sajjad, T and Meevasana, W (2017). Narrow-band anisotropic electronic structure of ReS2. Physical Review B. 96 (8).
AuthorsBiswas, D, Ganose, Alex M, Yano, R, Riley, JM, Bawden, L, Clark, OJ, Feng, J, Collins-Mcintyre, L, Sajjad, T and Meevasana, W
Abstract

We have used angle-resolved photoemission spectroscopy to investigate the band structure of
ReS 2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along kz. These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.

Year2017
JournalPhysical Review B
Journal citation96 (8)
PublisherAmerican Physical Society
ISSN2469-9950
Digital Object Identifier (DOI)doi:10.1103/PhysRevB.96.085205
Web address (URL)https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.085205
Publication dates
Print15 Aug 2017
Online16 Aug 2017
Publication process dates
Accepted16 Jun 2017
Deposited12 Feb 2020
Accepted author manuscript
License
CC BY 4.0
File Access Level
Open
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