An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties

Journal article

Chen, R., Sathasivam, S., Borowiec, J. and Carmalt, C. (2024). An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties. ACS Applied Electronic Materials. https://doi.org/10.1021/acsaelm.4c00973
AuthorsChen, R., Sathasivam, S., Borowiec, J. and Carmalt, C.
Abstract

Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga2O3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga2O3 films, reducing it from 4.2 × 106 Ω cm to 2 × 105 Ω cm for the 2.5 at. % Sn:Ga2O3 compared to the nominally undoped Ga2O3.

Year2024
JournalACS Applied Electronic Materials
PublisherAmerican Chemical Society (ACS)
ISSN2637-6113
Digital Object Identifier (DOI)https://doi.org/10.1021/acsaelm.4c00973
Web address (URL)https://pubs.acs.org/doi/10.1021/acsaelm.4c00973
Funder/ClientEngineering and Physical Sciences Research Council
London South Bank University
Publication dates
Online12 Aug 2024
Publication process dates
Accepted29 Jul 2024
Deposited21 Aug 2024
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Open
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