Overcoming the compensation of acceptors in GaN:Mg by defect complex formation

Journal article

Xie, Z., Buckeridge, J., Catlow, R.C.A., Zhang, A., Keal, T.W., Sherwood, P., Lu, Y., Woodley, S.M. and Sokol, A.A. (2023). Overcoming the compensation of acceptors in GaN:Mg by defect complex formation. APL Materials. 11 (8), p. 080701. https://doi.org/10.1063/5.0148858
AuthorsXie, Z., Buckeridge, J., Catlow, R.C.A., Zhang, A., Keal, T.W., Sherwood, P., Lu, Y., Woodley, S.M. and Sokol, A.A.
Abstract

In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such compensation can be overcome by forming two kinds of Mg-rich complexes: one that contains VN and the other that contains only MgGa and Mgi. Such complexing not only neutralizes VN and Mgi but also forms better complex acceptors that have lower formation energies and smaller hole localization energies than isolated MgGa. Our results help explain the different doping behaviors in samples grown by different methods.

Year2023
JournalAPL Materials
Journal citation11 (8), p. 080701
PublisherAIP Publishing
ISSN2166-532X
Digital Object Identifier (DOI)https://doi.org/10.1063/5.0148858
Web address (URL)https://doi.org/10.1063/5.0148858
Publication dates
Online04 Aug 2023
Publication process dates
Accepted12 Jul 2023
Deposited07 Aug 2023
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Open
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Buckeridge et al. Reply:
Buckeridge, J., Catlow, C. R. A., Scanlon, D. O., Keal, T. W., Sherwood, P., Miskufova, M., Walsh, A., Woodley, S. M. and Sokol, A. A. (2015). Buckeridge et al. Reply: Physical Review Letters. 115 (2), p. 029702. https://doi.org/10.1103/PhysRevLett.115.029702
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