Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory
Journal article
Linhart, W.M., Rajpalke, M.K., Buckeridge, J., Murgatroyd, P.A.E., Bomphrey, J.J., Alaria, J., Catlow, C.R.A., Scanlon, D.O., Ashwin, M.J. and Veal, T.D. (2016). Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory . Applied Physics Letters. 109, p. 132104. https://doi.org/10.1063/1.4963836
Authors | Linhart, W.M., Rajpalke, M.K., Buckeridge, J., Murgatroyd, P.A.E., Bomphrey, J.J., Alaria, J., Catlow, C.R.A., Scanlon, D.O., Ashwin, M.J. and Veal, T.D. |
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Abstract | Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k · P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory. |
Year | 2016 |
Journal | Applied Physics Letters |
Journal citation | 109, p. 132104 |
Publisher | AIP |
Digital Object Identifier (DOI) | https://doi.org/10.1063/1.4963836 |
Web address (URL) | https://aip.scitation.org/doi/full/10.1063/1.4963836 |
Publication dates | |
29 Sep 2016 | |
Publication process dates | |
Accepted | 01 Sep 2016 |
Deposited | 23 Oct 2019 |
Accepted author manuscript | License File Access Level Open |
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