Controlling nanowire nucleation and growth with a negative substrate bias
Ball, J and Reehal, HS (2016). Controlling nanowire nucleation and growth with a negative substrate bias. CrystEngComm.
|Authors||Ball, J and Reehal, HS|
The varied applications of silicon nanowires can influence the required wire density, diameter and length. We demonstrate the ability to control wire nucleation, diameter and length with the use of a negative substrate bias generated with the application of a RF signal in an electron cyclotron resonance chemical vapour deposition system. Growing nanowires from 0 V to −100 V bias we observe trends in the density, length and diameter in wires grown from two different thicknesses of Au. A model for the observed results is suggested.
|Publisher||Royal Society of Chemistry|
|Digital Object Identifier (DOI)||doi:10.1039/C6CE00403B|
|01 Apr 2016|
|Publication process dates|
|Deposited||31 May 2016|
|Accepted||22 Mar 2016|
|Accepted author manuscript|
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