Controlling nanowire nucleation and growth with a negative substrate bias

Journal article


Ball, J and Reehal, HS (2016). Controlling nanowire nucleation and growth with a negative substrate bias. CrystEngComm.
AuthorsBall, J and Reehal, HS
Abstract

The varied applications of silicon nanowires can influence the required wire density, diameter and length. We demonstrate the ability to control wire nucleation, diameter and length with the use of a negative substrate bias generated with the application of a RF signal in an electron cyclotron resonance chemical vapour deposition system. Growing nanowires from 0 V to −100 V bias we observe trends in the density, length and diameter in wires grown from two different thicknesses of Au. A model for the observed results is suggested.

Year2016
JournalCrystEngComm
PublisherRoyal Society of Chemistry
ISSN1466-8033
Digital Object Identifier (DOI)doi:10.1039/C6CE00403B
Publication dates
Print01 Apr 2016
Publication process dates
Deposited31 May 2016
Accepted22 Mar 2016
Accepted author manuscript
License
CC BY-ND
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https://openresearch.lsbu.ac.uk/item/87498

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