Controlling nanowire nucleation and growth with a negative substrate bias
Journal article
Ball, J and Reehal, HS (2016). Controlling nanowire nucleation and growth with a negative substrate bias. CrystEngComm. 16. https://doi.org/10.1039/C6CE00403B
Authors | Ball, J and Reehal, HS |
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Abstract | The varied applications of silicon nanowires can influence the required wire density, diameter and length. We demonstrate the ability to control wire nucleation, diameter and length with the use of a negative substrate bias generated with the application of a RF signal in an electron cyclotron resonance chemical vapour deposition system. Growing nanowires from 0 V to −100 V bias we observe trends in the density, length and diameter in wires grown from two different thicknesses of Au. A model for the observed results is suggested. |
Year | 2016 |
Journal | CrystEngComm |
Journal citation | 16 |
Publisher | Royal Society of Chemistry (RSC) |
ISSN | 1466-8033 |
Digital Object Identifier (DOI) | https://doi.org/10.1039/C6CE00403B |
Publication dates | |
01 Apr 2016 | |
Publication process dates | |
Deposited | 31 May 2016 |
Accepted | 22 Mar 2016 |
Accepted author manuscript | License File Access Level Open |
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https://openresearch.lsbu.ac.uk/item/87498
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Accepted author manuscript
Repository2_Controlling nanowire nucleation and growth with a negative substrate bias.docx | ||
License: CC BY-ND | ||
File access level: Open |
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