The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors
Conference paper
Hasnath, A, Reehal, HS and Ball, J (2018). The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors. 14th Photovoltaic Science, Applications and Technology. Imperial College, London 18 - 19 Apr 2018 London South Bank University.
Authors | Hasnath, A, Reehal, HS and Ball, J |
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Type | Conference paper |
Abstract | We present the characterisation of thin film binary, ternary & quaternary compounds which have been grown via the plasma sulphurisation of metallic precursor stacks using the ECR CVD. This method of deposition is a low pressure technique which utilises a microwave plasma discharge with SF6 as a precursor gas. Raman results reveal peaks associated with quaternary compounds comprising of distinctively arranged cation layers at processing temperature below 400C. SEM images reveal that a range of different types of structures were synthesised. Our work paves the way to the potential fabrication of thin film kesterite-based solar cells at low processing temperatures via the plasma sulphurisation of alloys of earth abundant materials. |
Year | 2018 |
Publisher | London South Bank University |
Accepted author manuscript | License File Access Level Open |
Publication dates | |
18 Apr 2018 | |
Publication process dates | |
Deposited | 28 Apr 2018 |
Accepted | 17 Mar 2018 |
https://openresearch.lsbu.ac.uk/item/86v3x
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Accepted author manuscript
PVSAT-14 Formatted Draft REVISED_V3.docx | ||
License: CC BY 4.0 | ||
File access level: Open |
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