The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors

Conference item


Hasnath, A, Reehal, HS and Ball, J (2018). The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors. 14th Photovoltaic Science, Applications and Technology. Imperial College, London 18 - 19 Apr 2018 London South Bank University.
AuthorsHasnath, A, Reehal, HS and Ball, J
Abstract

We present the characterisation of thin film binary, ternary & quaternary compounds which have been grown via the plasma sulphurisation of metallic precursor stacks using the ECR CVD. This method of deposition is a low pressure technique which utilises a microwave plasma discharge with SF6 as a precursor gas. Raman results reveal peaks associated with quaternary compounds comprising of distinctively arranged cation layers at processing temperature below 400C. SEM images reveal that a range of different types of structures were synthesised. Our work paves the way to the potential fabrication of thin film kesterite-based solar cells at low processing temperatures via the plasma sulphurisation of alloys of earth abundant materials.

Year2018
PublisherLondon South Bank University
Accepted author manuscript
License
CC BY 4.0
Publication dates
Print18 Apr 2018
Publication process dates
Deposited28 Apr 2018
Accepted17 Mar 2018
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https://openresearch.lsbu.ac.uk/item/86v3x

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