The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors
Hasnath, A, Reehal, HS and Ball, J (2018). The Effect of Process Parameters of Plasma Sulphurisation on the Morphology of CZT Precursors. 14th Photovoltaic Science, Applications and Technology. Imperial College, London 18 - 19 Apr 2018 London South Bank University.
|Authors||Hasnath, A, Reehal, HS and Ball, J|
We present the characterisation of thin film binary, ternary & quaternary compounds which have been grown via the plasma sulphurisation of metallic precursor stacks using the ECR CVD. This method of deposition is a low pressure technique which utilises a microwave plasma discharge with SF6 as a precursor gas. Raman results reveal peaks associated with quaternary compounds comprising of distinctively arranged cation layers at processing temperature below 400C. SEM images reveal that a range of different types of structures were synthesised. Our work paves the way to the potential fabrication of thin film kesterite-based solar cells at low processing temperatures via the plasma sulphurisation of alloys of earth abundant materials.
|Publisher||London South Bank University|
|Accepted author manuscript|
File Access Level
|18 Apr 2018|
|Publication process dates|
|Deposited||28 Apr 2018|
|Accepted||17 Mar 2018|
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