Effect of diffusion parameters on emitter formation in silicon solar cells by proximity rapid thermal diffusion

Journal article


Reehal, H. and Oates, A. (2018). Effect of diffusion parameters on emitter formation in silicon solar cells by proximity rapid thermal diffusion. Materials Science in Semiconductor Processing. https://doi.org/https://doi.org/10.1016/j.mssp.2017.12.006
AuthorsReehal, H. and Oates, A.
Abstract

N-type emitters have been formed in p-type monocrystalline silicon with good uniformity and high peak doping concentration by proximity rapid thermal diffusion (PRTD). High diffusion rates are achievable for relatively low temperatures (< 1000 °C) with the addition of O2 to the N2 diffusion atmosphere. Solar cells have been prepared from the diffused samples to assess their performance and efficiencies of up to 6.0% have been achieved. The devices possess high series resistance and high recombination rates amongst other factors which limit their performance. Reducing the junction depth improves Jsc and efficiency but is accompanied by degrading shunt resistance and FF for junction thicknesses below ~ 400 nm. Further refinements of cell processing should improve efficiency and result in a diffusion process for forming shallow emitters for application to microstructured devices such as micropillar radial junction solar cells.

KeywordsDiffusion; Rapid thermal processing; Emitter formation; Silicon solar cells
Year2018
JournalMaterials Science in Semiconductor Processing
PublisherElsevier
ISSN1369-8001
Digital Object Identifier (DOI)https://doi.org/https://doi.org/10.1016/j.mssp.2017.12.006
Publication dates
Print04 Feb 2018
Publication process dates
Deposited04 Jan 2018
Accepted12 Dec 2017
Accepted author manuscript
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Open
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Re-Submission_REEHAL.docx
License: CC BY-NC-ND 4.0
File access level: Open

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Proximity rapid thermal diffusion for emitter formation in silicon solar cells
Oates, A. and Reehal, H. (2016). Proximity rapid thermal diffusion for emitter formation in silicon solar cells. 12th Photovoltaic Science, Applications and Technology Conference C98. Liverpool 06 - 08 Apr 2016 London South Bank University.